sensors

Image sensors used to measure the light intensity at the output of an optical system.

Functions

charge_diffusion(absorption, ...)	The standard deviation of the charge diffusion in a backilluminated CCD given by Janesick [2001].
mean_charge_capture(width_diffusion, width_pixel)	A function to compute the mean charge capture [Stern et al., 2004], the fraction of charge from each photon event retained in the central pixel.
kernel_diffusion(width_diffusion, ...)	The charge diffusion kernel convolved with a pixel and then integrated over the extent of each pixel.
energy_bandgap([temperature])	Bandgap energy in silicon given by Ramanathan and Kurinsky [2020].
energy_pair(wavelength[, temperature])	Calculate the average pair-production energy in silicon given by Ramanathan and Kurinsky [2020].
energy_pair_inf([temperature])	The asymptotic electron-hole pair production energy in silicon given by Ramanathan and Kurinsky [2020].
quantum_yield_ideal(wavelength[, temperature])	Calculate the ideal quantum yield of a silicon detector for a given wavelength and temperature using the model given in Ramanathan and Kurinsky [2020].
fano_factor(wavelength[, temperature])	Calculate the Fano factor of a silicon detector for a given wavelength and temperature using the model given in Ramanathan and Kurinsky [2020].
fano_factor_inf([temperature])	The asymptotic Fano factor in silicon given by Ramanathan and Kurinsky [2020].
transmittance(wavelength[, direction, n, ...])	The fraction of incident energy transmitted through the oxide layer into the light-sensitive material.
absorbance(wavelength[, direction, n, ...])	The fraction of incident energy absorbed by the light-sensitive region of the sensor
charge_collection_efficiency(absorption[, ...])	Compute the average charge collection efficiency using the differential charge collection efficiency profile described in Stern et al. [1994].
quantum_efficiency_effective(wavelength[, ...])	Calculate the effective quantum efficiency of a backilluminated detector.
probability_measurement([iqy, cce])	The probability that a photon absorbed in the epitaxial silicon layer results in at least one photoelectron measured by the sensor.
electrons_measured(photons_absorbed, wavelength)	A random sample from the distribution of measured electrons given the number of photons absorbed by the light-sensitive layer of the sensor.
electrons_measured_approx(photons_absorbed, ...)	A random sample from an approximate distribution of measured electrons given the number of photons absorbed by the light-sensitive layer of the sensor.
signal(photons_expected, wavelength[, ...])	A random sample from the approximate distribution of measured electrons given the expected number of photons incident on the front surface of the sensor.
vmr_signal(wavelength[, absorption, ...])	Compute the variance-to-mean ratio (VMR) of the number of electrons measured by the sensor using an analytic expression.

Classes

AbstractImagingSensor()	An interface describing an imaging sensor that can be used as the last surface in an optical system.
ImagingSensor([name, width_pixel, ...])	An arbitrary imaging sensor described by a pixel grid and a light-sensitive material.

Modules

materials

Models of light-sensitive materials designed to be used by ImagingSensor.